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IPB120N06NG

Infineon Technologies
Part Number IPB120N06NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB120N06N G IPP120N06N G OptiMOS® Power-Transistor Features • For fast switching converters and ...
Datasheet PDF File IPB120N06NG PDF File

IPB120N06NG
IPB120N06NG

Overview
www.
DataSheet4U.
com IPB120N06N G IPP120N06N G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 11.
7 75 V mΩ A Type IPP120N06N G IPB120N06N G Package Marking P-TO220-3-1 120N06N P-TO263-3-2 120N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 75 53 300 280 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=75 A, R GS=25 Ω I D=75 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 158 -55 .
.
.
175 55/175/56 See figure 3 Rev.
1.
11 page 1 2006-07-05 www.
DataSheet4U.
com IPB120N06N G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=94 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=75 A V GS=10 V, I D=75 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=75 A 60 1.
2 3 0.
01 Values typ.
IPP120N06N G Unit max.
0.
95 62 40 K/W 2 1 V µA - 1 100 36 10 9.
9 9.
6 2 72 100 12 11.
7 - nA mΩ Ω S 2) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for d...


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