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IPD26CN10NG

Infineon Technologies
Part Number IPD26CN10NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS®2 Power-Transistor Featur...
Datasheet PDF File IPD26CN10NG PDF File

IPD26CN10NG
IPD26CN10NG

Overview
www.
DataSheet4U.
com IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 25 35 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G Package Marking PG-TO263-3 26CN10N PG-TO252-3 25CN10N PG-TO262-3 26CN10N PG-TO220-3 26CN10N PG-TO251-3 25CN10N Maximum ratings, at T j...


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