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IPB039N04LG

Infineon Technologies
Part Number IPB039N04LG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPB039N04LG PDF File

IPB039N04LG
IPB039N04LG

Overview
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID Type IPB039N04L G IPP039N04L G IPP039N04L G IPB039N04L G 40 V 3.
9 mΩ 80 A Package Marking PG-TO263-3 039N04L PG-TO220-3 039N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=4.
5 V, T C=25 °C I D,pulse I AS E AS V GS V GS=4.
5 V, T C=100 °C T C=25 °C T C=25 °C I D=80 A, R GS=25 Ω Rev.
1.
2 page 1 Value Unit 80 ...


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