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SKW20N60HS

Infineon Technologies
Part Number SKW20N60HS
Manufacturer Infineon Technologies
Description High Speed IGBT
Published Apr 21, 2008
Detailed Description SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit with...
Datasheet PDF File SKW20N60HS PDF File

SKW20N60HS
SKW20N60HS

Overview
SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ VCE 600V IC 20 Eoff 240µJ Tj Marking Package PG-TO-247-3-21 G E PG-TO-247-3-21 Type SKW20N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 150°C K20N60HS Symbol VCE IC Value 600 36 20 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.
05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s 2) ICpul s IF 80 80 40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 ±20 ±30 10 178 -55.
.
.
+150 175 260 V µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2.
2 June 06 Power Semiconductors SKW20N60HS ^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C ...


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