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UPA1741TP

NEC
Part Number UPA1741TP
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Apr 22, 2008
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1741TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Un...
Datasheet PDF File UPA1741TP PDF File

UPA1741TP
UPA1741TP

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1741TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain The µPA1741TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
www.
DataSheet4U.
com FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.
79 Ω MAX.
(VGS = 10 V, ID = 2.
5 A) • Low input capacitance Ciss = 340 pF TYP.
(VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and surface mount package (Power HSOP8) 1.
49 ±0.
21 1.
44 TYP.
1 5.
2 +0.
17 –0.
2 4 0.
8 ±0.
2 S +0.
10 –0.
05 6.
0 ±0.
3 4.
4 ±0.
15 0.
05 ±0.
05 0.
15 1.
27 TYP.
0.
40 1 +0.
10 –0.
05 0.
10 S 0.
12 M ORDERING INFORMATION 2.
9 MAX.
2.
0 ±0.
2 9 4.
1 MAX.
PART NUMBER PACKAGE Power HSOP8 8 µPA1741TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.
All terminals are connected.
) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 250 ±30 ±5.
0 ±15 21 1 150 −55 to +150 5.
0 2.
5 5.
0 2.
5 V V A A W W °C °C A mJ A mJ Gate Protection Diode Source Gate Body Diode Drain 1.
1 ±0.
2 4 EQUIVALENT CIRCUIT Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note4 Note4 IAS EAS IAR EAR Repetitive Avalanche Current Repetitive Pulse Avalanche Energy Notes 1.
2.
3.
4.
PW ≤ 10 µs, Duty Cycle ≤ 1% Mounted on glass epoxy board of 1 inch x 1 inch x 0.
8 mm Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Tch(peak) ≤ 150°C, L = 100 µH Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional ...


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