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IXFM50N20

IXYS Corporation
Part Number IXFM50N20
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Apr 23, 2008
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM42N20 IXFH/IXFM/I...
Datasheet PDF File IXFM50N20 PDF File

IXFM50N20
IXFM50N20

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 200 V 200 V 200 V ID25 RDS(on) 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) www.
DataSheet4U.
com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 Maximum Ratings 200 200 ±20 ±30 42 50 58 168 200 232 42 50 58 30 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V G TO-268 (D3) Case Style (TAB) A A A A A A A A A mJ V/ns W °C °C °C °C S (TAB) TO-204 AE (IXFM) S D G = Gate, S = Source, D = Drain, TAB = Drain G EAR dv/dt PD TJ TJM Tstg TL Md Weight TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque 300 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g Featur...


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