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AP9922EO

Part Number	AP9922EO
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	May 2, 2008
Detailed Description	AP9922EO Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive www.DataSheet4U.com D2 S2 G2...
Datasheet	AP9922EO PDF File

Overview

AP9922EO Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive www.
DataSheet4U.
com D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 15mΩ 6.
8A ▼ Optimal DC/DC battery application TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.
5V Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating 20 ±12 6.
8 5.
4 25 1 0.
008 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
125 Unit ℃/W Data and specificati...

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AP9922EO N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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