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C2073A

Toshiba Semiconductor
Part Number C2073A
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published May 13, 2008
Detailed Description 2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertic...
Datasheet PDF File C2073A PDF File

C2073A
C2073A

Overview
2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1.
5 A Base current IB 0.
5 A Collector power dissipation Junction temperature Ta = 25°C Tc = 25°C PC Tj 2.
0 W 25 150 °C 1.
Base 2.
Collector 3.
Emitter Storage temperature range Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant chan...


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