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FZ800R12KS4

eupec GmbH
Part Number FZ800R12KS4
Manufacturer eupec GmbH
Description IGBT-Module
Published May 31, 2008
Detailed Description Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorläufige Daten Preliminary dat...
Datasheet PDF File FZ800R12KS4 PDF File

FZ800R12KS4
FZ800R12KS4

Overview
Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 80°C TC = 25 °C tP = 1 ms, TC = 80°C VCES 1200 V IC,nom.
IC ICRM 800 1200 1600 A A A www.
DataSheet4U.
com Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw.
current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage TC=25°C, Transistor Ptot 6,9 kW VGES +/- 20V V IF 800 A tP = 1 ms IFRM 1600 A VR = 0V, tp = 10ms, TVj = 125°C 2 It 185.
000 A2s RMS, f = 50 Hz, t = 1 min.
VISOL 2.
500 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannunggate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25°C IC = 800 A, VGE = 15V, Tvj = 125°C IC = 32 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min.
4,5 typ.
3,00 3,60 5,5 max.
6,5 V V V f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 52 - nF f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - t.
b.
d.
- nF VGE = -15V .
.
.
+ 15V, VCE = 600V VCE = 1200V, VGE = 0V, Tvj = 25°C VCE = 1200V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C QG ICES - 8,4 t.
b.
d.
t.
b.
d.
- 400 µC µA mA nA IGES - prepared by: R.
Jörke approved by: Jens Thurau date of publication : 2000-06-14 revision: 1 1 (9) FZ800R12K...


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