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W150NF55

STMicroelectronics
Part Number W150NF55
Manufacturer STMicroelectronics
Description STW150NF55
Published Jun 5, 2008
Detailed Description N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET TYPE STB150NF55 STP150NF55 www.DataSheet4U.c...
Datasheet PDF File W150NF55 PDF File

W150NF55
W150NF55

Overview
N-CHANNEL 55V - 0.
005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET TYPE STB150NF55 STP150NF55 www.
DataSheet4U.
com STP150NF55 s s STB150NF55 STP150NF55 STW150NF55 AUTOMOTIVE SPECIFIC VDSS 55 V 55 V 55 V RDS(on) <0.
006 Ω <0.
006 Ω <0.
006 Ω ID 120 A(**) 120 A(**) 120 A(**) 3 1 TYPICAL RDS(on) = 0.
005 Ω SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE D2PAK TO-263 (Suffix “T4”) 3 1 2 TO-247 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB150NF55T4 STP150NF55 STW150NF55 MARKING B150NF55 P150NF55 W150NF55 PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM(•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (•) Pulse width limited by safe operating area.
(**) Current Limited by Package Value 55 55 ± 20 120 106 480 300 2.
0 8 850 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 30V October 2002 1/14 STB150NF55 STP150NF55 STW150NF55 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Tempera...


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