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STU3055L2

SamHop Microelectronics
Part Number STU3055L2
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Jun 7, 2008
Detailed Description STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transi...
Datasheet PDF File STU3055L2 PDF File

STU3055L2
STU3055L2

Overview
STU/D3055L2 SamHop Microelectronics Corp.
Feb.
01 2005 ver1.
3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS www.
DataSheet4U.
com 20V FEATURES (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON).
40 @ VGS = 10V 45 @ VGS = 4.
5V Rugged and reliable.
TO-252 and TO-251 Package.
D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed @TC=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 18 30 15 50 -55 to 175 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.
DataSheet4U.
com S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =6.
0A V GS =4.
5V, ID = 5.
2A V DS = 5V, V GS = 4.
5V V DS = 10V, ID = 6.
0A Min Typ C Max Unit 20 1 100 0.
7 1.
2 25 30 15 7 614 151 116 1.
8 40 45 V uA nA V m-ohm m-ohm Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =8V, V GS = 0V f =1.
0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V DD = 10V, ID = 1A, V GE N = 4.
5V, R L = 10 ohm R GEN = 6 oh...


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