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29F160E

Excel Semiconductor
Part Number 29F160E
Manufacturer Excel Semiconductor
Description Boot Sector Flash Memory
Published Jun 12, 2008
Detailed Description E ES S II Excel Semiconductor inc. ES29LV400E 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory ww...
Datasheet PDF File 29F160E PDF File

29F160E
29F160E

Overview
E ES S II Excel Semiconductor inc.
ES29LV400E 4Mbit(512Kx 8/256K x 16) CMOS 3.
0 Volt-only, Boot Sector Flash Memory www.
DataSheet4U.
com GENERAL FEATURES • Single power supply operation - 2.
7V -3.
6V for read, program and erase operations • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC SOFTWARE FEATURES • Sector Structure - 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors - 64Kbyte x 7sectors • Top or Bottom boot block - ES29LV400ET for Top boot block device - ES29LV400EB for Bottom boot block device • Package Options - 48-pin TSOP - 48-ball FBGA ( 6 x 8 mm ) - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.
18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status Unlock Bypass program Autoselect mode Auto-sleep mode after tACC + 30ns HARDWARE FEATURES • Hardware reset input pin ( RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin ( RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • Sector protection / unprotection ( RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection ( RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system DEVICE PERFORMANCE • Read access time - 70ns / 90ns • Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Sector erase time : 0.
7sec/sector ( typical ) • Power consumption (typical values) - 200nA in standby or automatic sleep mode - 7mA active read c...


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