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11DF3

EIC discrete Semiconductors
Part Number 11DF3
Manufacturer EIC discrete Semiconductors
Description (11DF3 / 11DF4) ULTRA FAST RECTIFIER DIODES
Published Jun 16, 2008
Detailed Description 11DF3 - 11DF4 PRV : 300 - 400 Volts Io : 1.0 Ampere www.DataSheet4U.com ULTRA FAST RECTIFIER DIODES DO - 41 0.107 (2.7)...
Datasheet PDF File 11DF3 PDF File

11DF3
11DF3

Overview
11DF3 - 11DF4 PRV : 300 - 400 Volts Io : 1.
0 Ampere www.
DataSheet4U.
com ULTRA FAST RECTIFIER DIODES DO - 41 0.
107 (2.
7) 0.
080 (2.
0) 1.
00 (25.
4) MIN.
FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfast recovery time Pb / RoHS Free 0.
205 (5.
2) 0.
166 (4.
2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.
339 gram 0.
034 (0.
86) 0.
028 (0.
71) 1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current, 8.
3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.
0 A Maximum DC Reverse Current at VRRM Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Temperature Range Note: SYMBOL VRRM VRMS VDC Ta = 57 °C IF(AV) IFSM 11DF3 300 210 300 1.
0 30 11DF4 400 280 400 UNIT V V V A A VF IR Trr TJ TSTG 1.
25 10 35 - 65 to + 150 - 65 to + 150 V µA ns °C °C ( 1 ) Reverse Recovery Test Conditions : IF = 0.
5 A, IR = 1.
0 A, Irr = 0.
25 A.
Page 1 of 2 Rev.
02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 11DF3 - 11DF4 ) FIG.
1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.
5 Trr www.
DataSheet4U.
com + D.
U.
T.
50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.
25 - 1.
0 A SET TIME BASE FOR 15 ns/cm NOTES : 1.
Rise Time = 7 ns max.
, Input Impedance = 1 megaohm, 22 pF.
2.
Rise time = 10 ...


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