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B1261-Z

NEC
Part Number B1261-Z
Manufacturer NEC
Description 2SB1261-Z
Published Jun 23, 2008
Detailed Description DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed f...
Datasheet PDF File B1261-Z PDF File

B1261-Z
B1261-Z

Overview
DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.
3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −60 V Emitter to Base Voltage VEBO −7.
0 V Collector Current (DC) IC(DC) −3.
0 A Collector Current (pulse) Note 1 IC(pulse) −5.
0 A Base Current (DC) IB(DC) −0.
5 A Total Power Dissipation (TA = 25°C) Note 2 PT1 2.
0 W Total Power Dissipation (TC = 25°C) PT2 10 W Junction Temperature T...


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