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SEMIX151GD128DS

Part Number	SEMIX151GD128DS
Manufacturer	Semikron International
Description	IGBT
Published	Jun 24, 2008
Detailed Description	SEMiX151GD128Ds SEMiX®13 SPT IGBT Modules SEMiX151GD128Ds Preliminary Data Features • Homogeneous Si • SPT = Soft-Punch...
Datasheet	SEMIX151GD128DS PDF File

Overview

SEMiX151GD128Ds SEMiX®13 SPT IGBT Modules SEMiX151GD128Ds Preliminary Data Features • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Typical Applications • AC inverter drives • UPS • Electronic welders up to 20 kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 3 mA VGE = 0 V VCE = 12...

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SEMIX151GD128DS IGBT - Semikron International

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