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SEMIX101GD126HDS

Part Number	SEMIX101GD126HDS
Manufacturer	Semikron International
Description	IGBT
Published	Jun 24, 2008
Detailed Description	SEMiX101GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX101GD126HDs Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet	SEMIX101GD126HDS PDF File

Overview

SEMiX101GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX101GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max.
• Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25...

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SEMIX101GD126HDS IGBT - Semikron International

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