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EFA040A-70

Execlics
Part Number EFA040A-70
Manufacturer Execlics
Description Low Distortion GaAs Power FET
Published Jun 24, 2008
Detailed Description Excelics DATA SHEET 180 Min. (All Leads) EFA040A-70 Low Distortion GaAs Power FET 44 19 4 • • • • • • www.DataSheet4U....
Datasheet PDF File EFA040A-70 PDF File

EFA040A-70
EFA040A-70

Overview
Excelics DATA SHEET 180 Min.
(All Leads) EFA040A-70 Low Distortion GaAs Power FET 44 19 4 • • • • • • www.
DataSheet4U.
com NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.
0dBm TYPICAL OUTPUT POWER 8.
0dB TYPICAL POWER GAIN AT 12GHz 0.
3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz 60 45 MIN 20.
0 6.
5 TYP 22.
0 22.
0 8.
0 5.
0 33 105 60 -2.
0 -10 -6 -15 -14 250* o MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.
0 mA 160 mA mS -3.
5 V V V C/W Drain Breakdown Voltage Igd=1.
0mA So...


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