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SI1904EDH

Vishay Siliconix
Part Number SI1904EDH
Manufacturer Vishay Siliconix
Description DUAL N-CHANNEL 25-V (D-S) MOSFET
Published Jun 24, 2008
Detailed Description Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 1.04 @ VGS...
Datasheet PDF File SI1904EDH PDF File

SI1904EDH
SI1904EDH


Overview
Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 1.
04 @ VGS = 2.
5 V 0.
65 rDS(on) (W) 0.
810 @ VGS = 4.
5 V ID (A) 0.
73 D TrenchFETr Power MOSFETS: 2.
5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D1 D2 www.
DataSheet4U.
com SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CB XX YY G1 Lot Traceability and Date Code Part # Code 2 kW 2 kW G2 G1 2 5 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID 0.
53 IDM IS 0.
61 0.
74 0.
38 –55 to 150 2 0.
48 0.
57 0.
30 W _C 0.
46 A Symbol VDS VGS 5 secs 25 Steady State Unit V "8 0.
73 0.
64 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71445 S-03929—Rev.
B, 21-May-01 www.
vishay.
com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W 1 Si1904EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.
5 V Gate-Body Leakage VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V IDSS ID(on) rDS(on) gfs VSD VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 0.
64 A Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS = 2.
5 V, ID = 0.
2 A VDS = 10 V, ID = 0.
64 A IS = 0.
48 A, VGS = 0 V 2 0.
630 0.
830 1.
1 0.
80 1.
2 0.
810 1.
04 W S V 0.
6 "1 "1 1 5 V mA mA mA A Symbol Test Condition Min Typ Max Unit www.
DataSheet4U.
com Zero Gate Voltage D...


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