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IRF1902PBF

Part Number	IRF1902PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 24, 2008
Detailed Description	PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surf...
Datasheet	IRF1902PBF PDF File

Overview

PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.
DataSheet4U.
com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 85@VGS = 4.
5V 170@VGS = 2.
7V ID 4.
0A 3.
2A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power application...

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IRF1902PBF HEXFET Power MOSFET - International Rectifier

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