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WFW10N80

Wisdom technologies
Part Number WFW10N80
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Jun 25, 2008
Detailed Description PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Ty...
Datasheet PDF File WFW10N80 PDF File

WFW10N80
WFW10N80

Overview
PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.
05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2.
Drain ● www.
DataSheet4U.
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Gate { ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies.
TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM...


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