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MTW6N100E

Motorola
Part Number MTW6N100E
Manufacturer Motorola
Description TMOS POWER FET
Published Jun 27, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect...
Datasheet PDF File MTW6N100E PDF File

MTW6N100E
MTW6N100E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high www.
DataSheet4U.
com voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 6.
0 Apk, L = 27.
77 mH, RG = 25 Ω) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL G S ™ Data Sheet MTW6N100E Motorola Preferred De...


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