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MTW33N10E

Part Number	MTW33N10E
Manufacturer	Motorola
Description	TMOS POWER FET
Published	Jun 27, 2008
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ ...
Datasheet	MTW33N10E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET .
™ MTW33N10E Motorola Preferred Device Power Field Effect Transistor TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe ope...

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MTW33N10E TMOS POWER FET - Motorola

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