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STW13NB60FI

STMicroelectronics
Part Number STW13NB60FI
Manufacturer STMicroelectronics
Description N - CHANNEL PowerMESH MOSFET
Published Jun 30, 2008
Detailed Description ® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB6...
Datasheet PDF File STW13NB60FI PDF File

STW13NB60FI
STW13NB60FI

Overview
® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.
48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB60FI www.
DataSheet4U.
com s s s s s V DSS 600 V 600 V R DS(on) <0.
54 Ω <0.
54 Ω ID 13 A 8.
6 A TYPICAL RDS(on) = 0.
48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o o TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW 13NB60 STH13NB60FP 600 600 ± 30 13 8.
2 52 190 1.
52 4  -65 to 150 150 ( 1) ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V 8.
6 5.
4 52 80 0.
64 4 2000 A A A W W/ C V/ns V o o o C C (•) Pulse width limited by safe operating area January 2000 1/9 STW13NB60 STH13NB60FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.
66 30 0.
1 300 ISOW AT T218 1.
56 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Ty...


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