DatasheetsPDF.com

BF420

ST Microelectronics
Part Number BF420
Manufacturer ST Microelectronics
Description SMALL SIGNAL NPN TRANSISTOR
Published Jun 30, 2008
Detailed Description ® BF420 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code BF420 www.DataSheet4U.com Marking BF420 BF420 Pac...
Datasheet PDF File BF420 PDF File

BF420
BF420

Overview
® BF420 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code BF420 www.
DataSheet4U.
com Marking BF420 BF420 Package / Shipment TO-92 / Bulk TO-92 / Ammopack BF420-AP s s s SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS BF421 TO-92 Bulk TO-92 Ammopack APPLICATIONS s VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max.
Operating Junction Temperature o Value 300 300 5 500 600 830 -65 to 150 150 Unit V V V mA mA mW o o C C February 2003 1/5 BF420 THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient R thj-Case • Thermal Resistance Junction-Case Max Max 150 50 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 200 V V CB = 200 V V CB = 300 V V EB = 5 V I C = 10 mA 300 T C = 150 o C Min.
Typ.
Max.
10 10 100 50 Unit nA µA µA nA V www.
DataSheet4U.
com I EBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance I C = 100 µ A 300 V V (BR)EBO I E = 100 µ A 5 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT C CBO C EBO I C = 30 mA I C = 30 mA I C = 25 mA I B = 5 mA I B = 5 mA V CE = 20 V f =20 MHz f = 1MHz 50 60 6 22 0.
6 1.
2 V V I C = 10 mA V CE = 10 V IE = 0 V CB = 10 V MHz pF pF Emitter-Base IC = 0 Capa...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)