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HX6256

Honeywell
Part Number HX6256
Manufacturer Honeywell
Description 32K x 8 Static RAM
Published Jul 3, 2008
Detailed Description HX6256 32K x 8 Static RAM The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static ran...
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HX6256
HX6256

Overview
HX6256 32K x 8 Static RAM The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality.
It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments.
The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply.
The RAM is available www.
DataSheet4U.
com with either TTL or CMOS compatible I/O.
Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected.
The RAM read operation is fully asynchronous, with an associated typical access time of 17 ns at 5 V.
Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques.
The RICMOS™ IV process is a 5-volt, SOI CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.
75 µm (0.
6 µm effective gate length—Leff).
Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability.
A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SOI substrate provide improved dose rate hardening.
FEATURES RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.
7 µm Process (Leff = 0.
6 µm) • • • • • • Total Dose Hardness through 1x106 rad(SiO2) Neutron Hardness through 1x1014 cm-2 Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s Dose Rate Survivability through 1x1011 rad(Si)/s Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit No Latchup • • • OTHER • Listed On SMD#5962–95845 • Fast Cycle Times o ≤ 17 ns (Typical) o ≤ 25 ns (-55 to 125°C) Read Write Cycle Asynchronous Operation o CMOS or TTL ...


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