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14N03L

Infineon Technologies
Part Number 14N03L
Manufacturer Infineon Technologies
Description IPD14N03L
Published Jul 4, 2008
Detailed Description IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 ...
Datasheet PDF File 14N03L PDF File

14N03L
14N03L

Overview
IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.
5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance RDS(on) www.
DataSheet4U.
com • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Type IPD14N03L Package Ordering Code Marking 14N03L P- TO252 -3-11 Q67042-S4111 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 20 7 6 ±20 75 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-17 IPD14N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.
DataSheet4U.
com resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
1.
3 max.
2 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min.
V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = VDS ID = 30 µA Zero gate voltage drain current V DS=30V, V GS=0V, Tj=25°C V DS=30V, V GS=0V, Tj=125°C µA 0.
01 10 1 16.
1 10.
8 1 100 100 20 13.
5 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, ID=20A Drain-source on-state resistance V GS=10V, ID=20A 1Current limited by bondwire ; with an R thJC = 2K/W the chip is able to ...


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