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PBMB200A6

Nihon Inter Electronics
Part Number PBMB200A6
Manufacturer Nihon Inter Electronics
Description IGBT MODULE
Published Jul 7, 2008
Detailed Description IGBT MODULE CIRCUIT H-Bridge 200A 600V OUTLINE DRAWING PBMB200A6 www.DataSheet4U.com 8- fasten- tab No 110 Dimensio...
Datasheet PDF File PBMB200A6 PDF File

PBMB200A6
PBMB200A6

Overview
IGBT MODULE CIRCUIT H-Bridge 200A 600V OUTLINE DRAWING PBMB200A6 www.
DataSheet4U.
com 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PBMB200A6 600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.
) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 3.
6 ohm VGE= +/- 15V Min.
4.
0 - Typ.
2.
1 20,000 0.
15 0.
25 0.
2 0.
45 Max.
2.
0 1.
0 2.
6 8.
0 0.
3 0.
4 0.
35 0.
7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Typ.
1.
9 0.
15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=200A/µs Min.
- Max.
2.
4 0.
25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min.
- Typ.
- Max.
0.
16 0.
38 PBMB200A6 Fig.
1- Output Characteristics (Typical) 400 Fig.
2- Collector to Emitter On Voltage vs.
Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=80A 400A V GE =20V 12V Collector to Emitter Voltage V CE (V) 15V 10V 14 200A 12 10 8 6 4 2 0 Collector Current I C (A) 300 www.
DataSheet4U.
com 200 9V 100 8V 7V 0 0 2 4 6 8 10 0 4 8 12...


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