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SPI42N03S2L-13

Infineon Technologies
Part Number SPI42N03S2L-13
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jul 8, 2008
Detailed Description SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 OptiMOS® Power-Transistor Features • N-channel • Enhancement mode • Logic ...
Datasheet PDF File SPI42N03S2L-13 PDF File

SPI42N03S2L-13
SPI42N03S2L-13

Overview
SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 OptiMOS® Power-Transistor Features • N-channel • Enhancement mode • Logic level www.
DataSheet4U.
com Product Summary V DS R DS(on),max ID 30 12.
9 42 V mΩ A • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Avalanche rated • dv /dt rated P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4034 Q67042-S4035 Q67042-S4104 Marking 2N03L13 2N03L13 2N03L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Repetitive avalanche energy Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=42 A, R GS=25 Ω limited by T jmax 2) I D=42 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 42 42 248 110 8 6 ±20 83 -55 .
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175 55/175/56 mJ mJ kV/µs V W °C Unit A Rev.
2.
0 page 1 2004-06-04 SPI42N03S2L-13 SPP42N03S2L-13 Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB www.
DataSheet4U.
com SPB42N03S2L-13 Unit max.
Values typ.
R thJC R thJA minimal footprint 6 cm2 cooling area3) - 1.
2 - 1.
8 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=37 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance4) I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=21 A V GS=4.
5 V, I D=21 A, SMD version V GS=10 V, I D=21 A V GS=10 V, I D=21 A, SMD version Gate resist...


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