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SPI47N10

Infineon Technologies
Part Number SPI47N10
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published Jul 8, 2008
Detailed Description Preliminary data SPI47N10 SPP47N10,SPB47N10 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262...
Datasheet PDF File SPI47N10 PDF File

SPI47N10
SPI47N10

Overview
Preliminary data SPI47N10 SPP47N10,SPB47N10 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode 175°C operating temperature www.
DataSheet4U.
com  Avalanche rated  dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4183 Q67040-S4173 tbd Marking 47N10 47N10 47N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 188 400 17.
5 6 ±20 175 -55.
.
.
+175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.
DataSheet4U.
com resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area 1) SPI47N10 SPP47N10,SPB47N10 Symbol min.
RthJC RthJA RthJA - Values typ.
max.
0.
85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =150°C µA 0.
1 10 25 1 100 100 33 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =33A 1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown ai...


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