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RSB12W

Rohm
Part Number RSB12W
Manufacturer Rohm
Description Low Capacitance Protection Device
Published Jul 8, 2008
Detailed Description RSB12W Diodes Low Capacitance Protection Device RSB12W zApplication ESD Protection www.DataSheet4U.com 1.6±0.2 zDimens...
Datasheet PDF File RSB12W PDF File

RSB12W
RSB12W

Overview
RSB12W Diodes Low Capacitance Protection Device RSB12W zApplication ESD Protection www.
DataSheet4U.
com 1.
6±0.
2 zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.
0 0.
5 0.
5 zFeatures 1) Ultra small mold type.
(EMD3) 2) Low capacitance 3) Bi direction 0.
2±0.
1 　　-0.
05 (2) 0.
3±0.
1 　　　 0.
05 (3) 0.
15±0.
05 0.
7 0.
7 0.
8±0.
1 1.
6±0.
2 0～0.
1 0.
1Min 0.
7 0.
6 EMD3 0.
6 (1) 0.
55±0.
1 0.
7±0.
1 zConstruction Silicon Epitaxial Planar 0.
5 0.
5 1.
0±0.
1 zStructure ROHM : JEDEC : SOT-416 JEITA : SC-75A dot(year week factory) zTaping specifications (Unit : mm) 4.
0±0.
1 2.
0±0.
05 φ1.
55±0.
1 　　　　　 0 1.
75±0.
1 0.
3±0.
1 3.
5±0.
05 1.
8±0.
2 5.
5±0.
2 1.
8±0.
1 φ0.
5±0.
1 0～0.
1 8.
0±0.
2 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Symbol P Tj Tstg Limits 150 150 -55 to +150 Unit mW ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Capacitance between terminals Symbol VZ IR Ct Min.
9.
6 Typ.
1 Max.
14.
4 0.
10 Unit V µA pF Conditions IZ=5mA VR=9V f=1MHz,VR=0V 1.
3 0.
9±0.
2 1/2 RSB12W Diodes zElectrical characteristics curve 10 REVERSE CURRENT:IR (nA) 10000 1000 1 Ta=25℃ Ta=75℃ Ta=125℃ 0.
1 Ta=-25℃ Ta=150℃ 100 10 1 0.
1 0.
01 0.
001 0.
001 11 12 13 14 15 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 16 0.
0001 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.
1 0 1 2 3 4 5 6 7 8 9 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) Ta=150℃ Ta=125℃ 10 f=1MHz 1 0.
01 www.
DataSheet4U.
com 13.
8 REVERSE CURRENT:IR(nA) Ta=25℃ IZ=5mA n=30pcs 10 9 8 7 6 5 4 3 2 1 AVE:0.
3089nA CAPACITANCE BETWEENTERMINALS:Ct(pF) Ta=25℃ VR=9V n=30pcs 1.
5 1.
4 1.
3 1.
2 1.
1 1 0.
9 0.
8 0.
7 0.
6 0.
5 AVE:0.
996pF ZENER VOLTAGE:Vz(Ｖ) 13.
7 Ta=25℃ f=1MHz VR=0V n=10pcs 13.
6 13.
5 AVE:13.
572V 13.
4 13.
3 Vz DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) DYNAMIC IMPEDANCE:Zz(Ω) 10000 Mounted on epoxy...


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