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SPI80N08S2-07R

Infineon Technologies
Part Number SPI80N08S2-07R
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jul 9, 2008
Detailed Description SPI80N08S2-07R OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 7.3 80 P- TO262 -3-1 V...
Datasheet PDF File SPI80N08S2-07R PDF File

SPI80N08S2-07R
SPI80N08S2-07R

Overview
SPI80N08S2-07R OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 7.
3 80 P- TO262 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature www.
DataSheet4U.
com • Avalanche rated • dv/dt rated • Integrated gate resistance for easy parallel connection Type SPI80N08S2-07R Package P- TO262 -3-1 Ordering Code Q67060-S7417 Marking RN0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1) TC=25°C Symbol ID Value 80 80 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 750 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RG...


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