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SPI80N03S2L-06

Infineon Technologies
Part Number SPI80N03S2L-06
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jul 9, 2008
Detailed Description www.DataSheet4U.com SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS® Power-Transistor Feature • N-Channel Produc...
Datasheet PDF File SPI80N03S2L-06 PDF File

SPI80N03S2L-06
SPI80N03S2L-06

Overview
www.
DataSheet4U.
com SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 5.
9 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4088 Q67042-S4089 Q67042-S4092 Marking 2N03L06 2N03L06 2N03L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 240 15 6 ±20 150 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=20A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.
DataSheet4U.
com SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA - Values typ.
0.
68 max.
1 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID = 80 µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.
01 10 1 1 100 100 nA mΩ 7 6.
6 5 4.
6 9.
5 9.
2 6.
2 5.
9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resista...


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