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SST31LF041A

SST
Part Number SST31LF041A
Manufacturer SST
Description 4 Mbit Flash 1 Mbit SRAM ComboMemory
Published Jul 16, 2008
Detailed Description 4 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF041 / SST31LF041A SST31LF041 / 041A4Mb Flash (x8) + 1Mb SRAM (x8) Monolith...
Datasheet PDF File SST31LF041A PDF File

SST31LF041A
SST31LF041A

Overview
4 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF041 / SST31LF041A SST31LF041 / 041A4Mb Flash (x8) + 1Mb SRAM (x8) Monolithic ComboMemory Preliminary Specifications FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM • Single 3.
0-3.
6V Read and Write Operations • Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention www.
DataSheet4U.
com • Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical) • Flash Sector-Erase Capability – Uniform 4 KByte sectors • Latched Address and Data for Flash • Fast Read Access Times: – SST31LF041/041A Flash: 70 ns SRAM: 70 ns – SST31LF041A Flash: 300 ns SRAM: 300 ns • Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 8 seconds (typical) • Flash Automatic Erase and Program Timing – Internal VPP Generation • Flash End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 32-lead TSOP (8mm x 14mm) SST31LF041A – 40-lead TSOP (10mm x 14mm) SST31LF041 PRODUCT DESCRIPTION The SST31LF041/041A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology.
The SST31LF041/041A devices write (SRAM or flash) with a 3.
0-3.
6V power supply.
The monolithic SST31LF041/041A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.
Featuring high performance Byte-Program, the flash memory bank provides a maximum Byte-Program time of 20 µsec.
The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the co...


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