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K3520-01MR

Fuji Electric
Part Number K3520-01MR
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Jul 22, 2008
Detailed Description 2SK3520-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power ...
Datasheet PDF File K3520-01MR PDF File

K3520-01MR
K3520-01MR

Overview
2SK3520-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications www.
DataSheet4U.
com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 500 A ±9 A ±36 V ±30 A 9 mJ 155.
3 kV/µs 20 kV/µs 5 2.
16 W 48 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *5 2 kVrms *1 L=3.
5mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < 150°C = *3 IF< *4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 500V *5 t=60sec, f=60Hz Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 Ω V CC =250V ID=8A VGS=10V L=3.
5mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=...


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