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IXFR24N100

IXYS Corporation
Part Number IXFR24N100
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs
Published Jul 25, 2008
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electricall...
Datasheet PDF File IXFR24N100 PDF File

IXFR24N100
IXFR24N100

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = 0.
39 W trr £ 250 ns www.
DataSheet4U.
com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 22 96 24 60 3 5 400 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclampe...


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