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GFD50N03

General Semiconductor
Part Number GFD50N03
Manufacturer General Semiconductor
Description N-Channel Enhancement Mode MOSFET
Published Jul 28, 2008
Detailed Description GFD50N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 30V RDS(ON) 9mΩ ID 65A D ® G TO-252 (DPAK) 0.265 ...
Datasheet PDF File GFD50N03 PDF File

GFD50N03
GFD50N03

Overview
GFD50N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 30V RDS(ON) 9mΩ ID 65A D ® G TO-252 (DPAK) 0.
265 (6.
73) 0.
255 (6.
48) 0.
214 (5.
44) 0.
206 (5.
23) 0.
094 (2.
39) 0.
087 (2.
21) 0.
023 (0.
58) 0.
018 (0.
46) 0.
050 (1.
27) 0.
035 (0.
89) t c u rod P New G S 0.
190 (4.
826) www.
DataSheet4U.
com D 0.
170 (4.
32) min.
0.
245 (6.
22) 0.
235 (5.
97) 0.
410 (10.
41) 0.
380 (9.
65) 0.
197 (5.
00) 0.
177 (4.
49) 0.
165 (4.
191) G S 0.
060 (1.
52) 0.
045 (1.
14) 0.
100 (2.
54) 0.
035 (0.
89) 0.
028 (0.
71) 0.
204 (5.
18) 0.
156 (3.
96) 0.
118 (3.
0) 0.
040 (1.
02) 0.
025 (0.
64) 0.
023 (0.
58) 0.
018 (0.
46) 0.
045 (1.
14) 0.
035 (0.
89) 0.
020 (0.
51) min.
0.
009 (0.
23) 0.
001 (0.
03) Dimensions in inches and (millimeters) 0.
243 (6.
172) 0.
063 (1.
6) Mounting Pad Layout Mechanical Data Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.
011oz.
, 0.
4g Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters and motor drives • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 Unit V 65 150 62.
5 25.
0 –55 to 150 2.
0 40 A W °C °C/W °C/W Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance RθJA Notes: (1) Maximum DC current limited by the package.
(2) 1-in2 2oz.
Cu PCB mounted 5/29/01 GFD50N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage www.
DataSheet4U.
com Gate-Body Leakage J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 2...


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