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SSM6J26FE

Toshiba Semiconductor
Part Number SSM6J26FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 30, 2008
Detailed Description SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applicat...
Datasheet PDF File SSM6J26FE PDF File

SSM6J26FE
SSM6J26FE

Overview
SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm 0.
2±0.
05 • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.
5 V) Ron = 980mΩ (max) (@VGS = -1.
8 V) Absolute Maximum Ratings (Ta = 25°C) 1.
6±0.
05 1.
2±0.
05 1 6 2 5 1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 0.
12±0.
05 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDS -20 V VGSS ±8 V ID -0.
5 A IDP -1.
5 PD 500 mW (Note 1) Tch 150 °C Tstg −5...


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