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SSM6J53FE

Toshiba Semiconductor
Part Number SSM6J53FE
Manufacturer Toshiba Semiconductor
Description High Current Switching Applications
Published Jul 30, 2008
Detailed Description SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Po...
Datasheet PDF File SSM6J53FE PDF File

SSM6J53FE
SSM6J53FE

Overview
SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • • 1.
5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 0.
5 1.
6±0.
05 1.
0±0.
05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.
5 V) : Ron = 204 mΩ (max) (@VGS = -1.
8 V) : Ron = 364 mΩ (max) (@VGS = -1.
5 V) Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.
8 -3.
6 500 150 −55~150 Unit V V A mW °C °C 1 2 3 6 5 4 0.
12±0.
05 www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range 0.
55±0.
05 1,2,5,6 :Drain 3 :Gate 4 :Source ES6 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2N1A Weight: 7.
0 mg (typ.
) Min −20 −12 ⎯ ⎯ −0.
3 (Note 2) (Note 2) (Note 2) (Note 2) 2.
7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ (Note 2) ⎯ Typ.
⎯ ⎯ ⎯ ⎯ ⎯ 5.
4 95 122 137 568 75 67 29 39 10.
6 7.
4 3.
3 0.
8 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2 (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Total gate c...


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