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SI7458DP

Vishay Siliconix
Part Number SI7458DP
Manufacturer Vishay Siliconix
Description N-Channel 20-V (D-S) Fast Switching MOSFET
Published Jul 31, 2008
Detailed Description Si7458DP New Product Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ...
Datasheet PDF File SI7458DP PDF File

SI7458DP
SI7458DP

Overview
Si7458DP New Product Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 22 19 rDS(on) (W) 0.
0045 @ VGS = 4.
5 V 0.
0075 @ VGS = 2.
5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.
07-mm Profile APPLICATIONS D Synchronous Rectifier–Low Output Voltage D Portable Computer Battery Selection or Protection www.
DataSheet4U.
com PowerPakt SO-8 D 6.
15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.
15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "12 22 Steady State Unit V 13.
4 10.
7 50 A 1.
6 1.
9 1.
2 –55 to 150 W _C ID IDM IS PD TJ, Tstg 17.
6 4.
3 5.
2 3.
3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71821 S-20012—Rev.
A, 04-Mar-02 www.
vishay.
com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.
0 Maximum 23 65 1.
5 Unit _C/W 1 Si7458DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 22 A VGS = 2.
5 V, ID = 19 A Forward Transconductancea Diode Forward Voltagea VDS = 15 V, ID = 22 A IS = 3 A, VGS = 0 V 50 0.
0035 0.
006 90 0.
8 1.
2 0.
0045 0.
0075 S V 0.
6 1.
4 "100 1 20 V nA mA A W Symbol Test Condition Min Typ Max Unit www.
DataSheet4U.
com Drain-Source On-State Resis...


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