DatasheetsPDF.com

SFAD304G

Taiwan Semiconductor Company
Part Number SFAD304G
Manufacturer Taiwan Semiconductor Company
Description (SFAD301G - SFAD308G) Glass Passivated Super Fast Rectifiers
Published Jul 31, 2008
Detailed Description Preliminary SFAD301G THRU SFAD308G 3.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Curre...
Datasheet PDF File SFAD304G PDF File

SFAD304G
SFAD304G


Overview
Preliminary SFAD301G THRU SFAD308G 3.
0 AMPS.
Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 3.
0 Amperes Features — — — www.
DataSheet4U.
com — Ultrafast Recovery Low forward voltage drop High current capability High reliability High surge current capability DPAK — Mechanical Data — — — — — Case: Epoxy molded Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL-STD202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds.
Weight: 0.
4 grams Dimensions in inches and (millimeters) — Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% Symbol SFAD SFAD SFAD SFAD Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 137℃ Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @3.
0A Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage @ TA=100℃ Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note3) Typical Junction Capacitance (Note 2) Operating Temperature Range Storage Temperature Range SFAD SFAD SFAD SFAD 301G 302G 303G 304G 305G 306G 307G 308G Units V V V A A VRRM VRMS VDC I(AV) IFSM VF IR Trr RθJC 50 35 50 100 150 200 300 400 500 600 70 105 140 210 280 350 420 100 150 200 300 400 500 600 3.
0 55 1.
1 5.
0 100 35 10 80 60 1.
3 1.
7 V µA µA nS ℃/W pF ℃ ℃ Cj TJ TSTG -65 to +150 -65 to +150 Notes: 1.
Reverse Recovery Test Conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A.
2.
Measured at 1 MHz and Applied Reverse Voltage of 4.
0 V D.
C.
3.
Thermal Resistance from Junction to Case.
Sept.
08, 2004 RATINGS AND CHARACTERISTIC CURVES (SFAD301G THRU SFAD308G) FIG.
1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 5...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)