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SI6966EDQ

Part Number	SI6966EDQ
Manufacturer	Vishay Siliconix
Description	N-Channel 2.5-V (G-S) MOSFET
Published	Aug 5, 2008
Detailed Description	SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET, ESD Protected CHARACTERISTICS • N-Channel V...
Datasheet	SI6966EDQ PDF File

Overview

SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.
5-V (G-S) MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical int...

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SI6966EDQ N-Channel 2.5-V (G-S) MOSFET - Vishay Siliconix

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