DatasheetsPDF.com

SI6969BDQ

Vishay Siliconix
Part Number SI6969BDQ
Manufacturer Vishay Siliconix
Description Dual P-Channel 1.8-V (G-S) MOSFET
Published Aug 5, 2008
Detailed Description Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ V...
Datasheet PDF File SI6969BDQ PDF File

SI6969BDQ
SI6969BDQ

Overview
Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
030 @ VGS = -4.
5 V -12 0.
040 @ VGS = -2.
5 V 0.
055 @ VGS = -1.
8 V ID (A) -4.
6 - 3.
8 - 3.
0 S1 S2 www.
DataSheet4U.
com TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6969BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 4.
6 Steady State Unit V -4.
0 -3.
2 -30 A -0.
7 0.
83 0.
53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -3.
8 -1.
0 1.
14 0.
73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72017 S-22051—Rev.
B, 18-Nov-02 www.
vishay.
com Steady State Steady State RthJA RthJF Symbol Typical 88 120 65 Maximum 110 150 80 Unit _C/W 1 Si6969BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.
6 V, VGS = 0 V VDS = -9.
6 V, VGS = 0 V, TJ = 70_C VDS -8 V, VGS = -4.
5 V VGS = -4.
5 V, ID = -4.
6 A Drain-Source On-State Resistancea rDS(on) VGS = -2.
5 V, ID = -3.
8 A VGS = -1.
8 V, ID = -3.
0 A gfs VSD VDS = -8 V, ID = -4.
6 A IS = -1.
25 A, VGS = 0 V -30 0.
024 0.
031 0.
044 18 -0.
68 -1.
1 0.
030 0.
040 0.
055 S V W -0.
45 -0.
8 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit www.
DataSheet4U.
com Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Ti...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)