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MRF9060MR1

Part Number	MRF9060MR1
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Aug 7, 2008
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field...
Datasheet	MRF9060MR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.
0 dB Efficiency — 40% (Two Tones) IMD — –31.
5 dBc www.
DataSheet4U.
com • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • TO–270 Dual Lead Available in Tape and Reel.
R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO–272 Dual Lead Available in Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF9060MR1 MRF9060MBR1 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–07, STYLE 1 TO–270 DUAL LEAD PLASTIC MRF9060MR1 CASE 1337–01, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9060MBR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.
5, +15 223 1.
79 –65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
56 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2002 MRF9060MR1 MRF9060MBR1 1 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model MRF9060MR1 MRF9060MBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (...

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