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MRF9060SR1

Part Number	MRF9060SR1
Manufacturer	Motorola
Description	N-CHANNEL BROADBAND RF POWER MOSFETs
Published	Aug 7, 2008
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub–Micron MOSFET Line RF Power Field ...
Datasheet	MRF9060SR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — –31 dBc www.
DataSheet4U.
com MRF9060R1 MRF9060SR1 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel.
R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360B–05, STYLE 1 NI–360 MRF9060R1 CASE 360C–05, STYLE 1 NI–360S MRF9060SR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060R1 MRF9060SR1 Storage Temperature Range Operating Junction Temperature Tstg TJ Symbol VDSS VGS PD Value 65 –0.
5, +15 159 0.
91 219 1.
25 –65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9060R1 MRF9060SR1 Symbol RθJC Max 1.
1 0.
8 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2002 MRF9060R1 MRF9060SR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gat...

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