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5070M0Y1V0

Numonyx
Part Number 5070M0Y1V0
Manufacturer Numonyx
Description PF38F5070M0Y1V0
Published Aug 8, 2008
Detailed Description Numonyx™ StrataFlash® Cellular Memory www.DataSheet4U.com (M18) Datasheet Product Features „ „ „ High-Performance Re...
Datasheet PDF File 5070M0Y1V0 PDF File

5070M0Y1V0
5070M0Y1V0

Overview
Numonyx™ StrataFlash® Cellular Memory www.
DataSheet4U.
com (M18) Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous burst reads: 5.
5 ns clock-to-data output — 8-, 16-, and continuous-word synchronous-burst Reads — Programmable WAIT configuration — Customer-configurable output driver impedance — Buffered Programming: 2.
0 µs/Word (typ), 512-Mbit 65 nm; Block Erase: 0.
9 s per block (typ) — 20 µs (typ) program/erase suspend Architecture — 16-bit wide data bus — Multi-Level Cell Technology — Symmetrically-Blocked Array Architecture — 256-Kbyte Erase Blocks — 1-Gbit device: Eight 128-Mbit partitions — 512-Mbit device: Eight 64-Mbit partitions — 256-Mbit device: Eight 32-Mbit partitions.
— 128-Mbit device: Eight 16-Mbit partitions.
— Read-While-Program and Read-While-Erase — Status Register for partition/device status — Blank Check feature Quality and Reliability — Expanded temperature: –30 °C to +85 °C — Minimum 100,000 erase cycles per block — ETOX™ X Process Technology (65 nm) — ETOX™ IX Process Technology (90 nm) „ „ „ „ Power — Core voltage: 1.
7 V - 2.
0 V — I/O voltage: 1.
7 V - 2.
0 V — Standby current: 60 µA (typ) for 512-Mbit, 65 nm — Deep Power-Down mode: 2 µA (typ) — Automatic Power Savings mode — 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz Software — Numonyx™ Flash Data Integrator (Numonyx™ FDI) optimized — Basic Command Set and Extended Command Set compatible — Common Flash Interface Security — OTP Registers: 64 unique pre-programmed bits 2112 user-programmable bits — Absolute write protection with VPP = GND — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down Density and Packaging — Density: 128-, 256-, and 512-Mbit, and 1Gbit — Address-data multiplexed and nonmultiplexed interfaces — ...


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