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MSA0104

Hewlett-Packard
Part Number MSA0104
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Aug 11, 2008
Detailed Description Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data www.DataSheet4U.com MSA-0104 Features • Cascadable 50 Ω Gain...
Datasheet PDF File MSA0104 PDF File

MSA0104
MSA0104


Overview
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data www.
DataSheet4U.
com MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.
8 GHz • High Gain: 17.
0 dB Typical at 0.
5 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and wide bandwidth IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
04A Plastic Package Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package.
This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9690E 6-246 MSA-0104 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature www.
DataSheet4U.
com Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 100°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 10 mW/°C for TC > 130°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
MSA-0104 Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.
1 to 3.
0 GHz f = 0.
1 to 3.
0 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0...



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