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IXDP20N60BD1

IXYS Corporation
Part Number IXDP20N60BD1
Manufacturer IXYS Corporation
Description High Voltage IGBT
Published Aug 11, 2008
Detailed Description High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD...
Datasheet PDF File IXDP20N60BD1 PDF File

IXDP20N60BD1
IXDP20N60BD1

Overview
High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE(sat) typ = 2.
2 V C G www.
DataSheet4U.
com E IXDP 20N60B G C TO-220 AB G C E C (TAB) E IXDP 20N60B D1 G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES...


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