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PM50RSE120

Mitsubishi Electric Semiconductor
Part Number PM50RSE120
Manufacturer Mitsubishi Electric Semiconductor
Description Intelligent Power Module
Published Aug 12, 2008
Detailed Description MITSUBISHI MITSUBISHI MODULES> PM50RSE120 PM50RSE120 FLAT-BASE FLAT-BASE...
Datasheet PDF File PM50RSE120 PDF File

PM50RSE120
PM50RSE120


Overview
MITSUBISHI MITSUBISHI MODULES> PM50RSE120 PM50RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • 15A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 5.
5/7.
5kW class inverter application...



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