DatasheetsPDF.com

H5N2007FN

Renesas Technology
Part Number H5N2007FN
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Aug 16, 2008
Detailed Description H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.1.00 May.28.2004 Features • Low on-...
Datasheet PDF File H5N2007FN PDF File

H5N2007FN
H5N2007FN

Overview
H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.
1.
00 May.
28.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline TO-220FN D G 1.
Gate 2.
Drain 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 25 100 25 100 9 5.
4 30 4.
17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.
1.
00, May.
28.
2004, page 1 of 7 H5N2007FN Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown volt...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)