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APT40GP90B2DQ2

Advanced Power Technology
Part Number APT40GP90B2DQ2
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published Aug 16, 2008
Detailed Description TYPICAL PERFORMANCE CURVES ® APT40GP90B2DQ2 APT40GP90B2DQ2G* APT40GP90B2DQ2(G) 900V *G Denotes RoHS Compliant, Pb Fre...
Datasheet PDF File APT40GP90B2DQ2 PDF File

APT40GP90B2DQ2
APT40GP90B2DQ2

Overview
TYPICAL PERFORMANCE CURVES ® APT40GP90B2DQ2 APT40GP90B2DQ2G* APT40GP90B2DQ2(G) 900V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.
DataSheet4U.
com • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.
APT40GP90B2DQ2(G) UNIT Volts 900 ±30 @ TC = 25°C 101 50 160 160A @ 900V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 900 3 4.
5 3.
2 2.
7 350 2 6 3.
9 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES µA nA 9-2005 050-7491 Rev A Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr www.
DataSheet4U.
com td(off) tf Eon1 Eon2 td...


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